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High Power Fiber Coupled Laser Diode for Optical Communication Systems
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Wuhan Shengshi Optical Technology Co., Ltd.

Contact Person: Wendy
Tel.: +86-027-87179709
Mobile: +86-15902779619
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wendy@laserdiodedevice.com

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  4. 8mw-10mw 1653.5nm Butterfly Laser Diode for Gas Detection

8-10mw 1653.5nm Butterfly Laser Diode for Gas Detection (Ultra Narrow Linewidth 1653nm butterfly laser diode)

The 8-10mw 1653.5nm Butterfly Laser Diode for gas detection (ultra narrow linewidth 1653nm butterfly laser diode) are provided in a 14-pin butterfly package. The equipment adopts the high-quality InGaAsP/InP strained MQW-DFB laser chip and is outfitted with a built-in cooler to prevent the equipment from overheating. It delivers single-mode optic fiber output and high-speed modulation at a maximum output power of 10MW. This series of laser equipment is designed based on external-cavity lasers with a built-in fiber Bragg grating which ensures a stabilized wavelength output, ultra-narrow spectral linewidth, and outstanding side-mode suppression ratio. It is commonly used in many scientific research fields as the optical gas detector, optical chemical sensor, optical testing equipment, fiber performance testing equipment, and the light source of OTDR systems.

Absolute Maximum Ratings
Parameter Symbol Condition Min. Max. Unit
Reverse Voltage Vr

2 V
Forward Current If

120 mA
Forward Voltage Vf Iop
2.5 V
Operating Temperature Tc Iop 0 60 °C
Storage Temperature Tlaser Iop -40 85 °c
Thermoelectric Cooler Voltage Vtec

3.0 V
Thermoelectric Cooler Current Ltec
-40 1.8 A
Storage Temperature Tstg Unbiased 5 85 °C
Storage Humidity -

85 %RH
Lead Soldering Temperature Stemp

260 °C
Lead Soldering Time Stime

10 sec
Optical & Electrical Characteristics
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Optical Output Power Po CW 6 8 - mW
Threshold Current Ith CW - 25 35 mA
Operating Current Iop Po=PL, TL=25 °C - 80 100 mA
Operation Voltage Vop Po=PL - 1.2 2.0 V
Slope Efficiency η Po=PL, TL=25 °C
0.1 - mW/mA
Peak Wavelength λP Po=PL, TL=25 °C 1652 1653.5 1655 nm
Side Mode Suppression SMST Po=PL, TL=25 °C 35 - - dB
Line width Δλ Po=PL, TL=25 °C - - 10 MHz
Thermistor Resistance Rt T=25℃ 9.5 - 10.5 kΩ
Thermistor B Constant B T=25℃ - 3900 - k
Laser Set temperature TL - 15 25 35 ℃
Monitor Current Imon Vrpd=5v 50 - 150
Monitor Dark Current ID Vrpd=5v - - 200 nA
TEC Current IC ΔT=40℃ - - 1.5 A
TEC Voltage VC ΔT=40℃ - - 2.0 V
Features
  • The Butterfly Laser Diode are capable of producing laser light at a stabilized wavelength.
  • Typical values for the equipment are up to 1653.3nm for the peak wavelength, spectral linewidth up to 100 KHz, minimum output power 8MW, and minimum SMSR 35dB.
  • The equipment is supplied with a thermoelectric cooler and thermistor.

We are a specialized 8-10mw 1653.5nm Butterfly Laser Diode for gas detection (ultra narrow linewidth 1653nm butterfly laser diode) manufacturer in China. We also provide FP fiber coupled laser diodes driver1-4mw, pin TIA receivers, butterfly fiber coupled laser diodes and more.
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